![]() POWER TRANSFORMER OF SYMMETRIC-DISSYMETRIC TYPE WITH COMPLETELY BALANCED TOPOLOGY
专利摘要:
Transformer of the symmetrical-asymmetrical type comprising a primary inductive circuit (L1) and a secondary inductive circuit (L2) formed in the same plane (P) by interleaved and stacked respective metallic tracks, comprising at least a first crossing region (CR1) wherein two facing connection plates (PL1, PL2) have rectangular plate shapes wider than the metal tracks, and are each diagonally connected to tracks of the secondary circuit (L2). 公开号:FR3049758A1 申请号:FR1652713 申请日:2016-03-30 公开日:2017-10-06 发明作者:Vincent Knopik 申请人:STMicroelectronics SA; IPC主号:
专利说明:
Power transformer of symmetrical-dissymmetrical type with completely balanced topology. The invention relates to integrated transformers of the symmetrical-dissymmetrical type commonly designated by those skilled in the art under the name Anglo-Saxon "BALUN" (BALanced to UNbalanced). The invention applies for example in mobile telephony or in the field of automotive radars. The realization of integrated silicon systems, whether power or processing, is more and more with differential structures and variable reference impedance for the analog parts. The "external" world essentially remains a system of the asymmetric mode type and of 50 Ohms reference impedance. The link between a symmetrical transmission line and an asymmetrical transmission line can not be achieved without a suitable electrical circuit. This transition is ensured by a transformer of the symmetrical-dissymmetrical type also called "balun". For example, a balun converts an asymmetric mode signal (or "single-ended" according to an Anglo-Saxon name commonly used by those skilled in the art) into a differential mode type signal, and vice versa, and provides impedance transformations. One of the main electrical characteristics of a balun is its loss of insertion, which must be advantageously the lowest possible. Indeed, the loss of insertion is the result in loss of the transformation made. It may be due to impedance mismatch, amplitude and / or phase imbalance between the two channels, ohmic loss, and / or all of these factors combined. This loss causes a reduction in the overall performance of the system employing this device. Furthermore, the performances of a balun are mainly expressed in terms of amplitude and phase symmetries, ie a difference in amplitude and a phase shift between the input and output signals advantageously minimized. Baluns can still be used, for example, in reception and transmission circuits of wireless communication systems, for the design of differential circuits such as amplifiers, mixers, oscillators and antenna systems. In the transmit and receive circuits of wireless communication systems, the differential side impedance can be low, typically of the order of 10 to 20 Ohms for a low noise amplifier while the impedance side asymmetric mode, that is to say on the side of the antenna, is, as indicated above, generally of the order of 50 Ohms. It follows therefore the need to have a high transformation ratio, which can be particularly complicated to achieve. Moreover, especially in transmission, the power amplifier must be powered with a high current, of the order of a few hundred milliamperes. And, if you want to power the power amplifier through the transformer (balun), it follows an impact on the performance of this balun. For example, high currents require a large width metal track, which introduces an increase in series resistance that is detrimental to insertion loss. Therefore, the design of baluns is usually limited to one loop turn on the secondary circuit for high power circuits. As a result, the coupling between the differential and the asymmetric channels is generally unfair and poorly distributed, resulting in poor performance such as phase shifts and amplitude mismatches. According to one embodiment, it is proposed a fully balanced symmetrical-asymmetrical type transformer integrated architecture, making it possible to obtain in-phase signals and corresponding amplitudes, in particular for power amplifier applications. According to one aspect, there is provided a transformer of the symmetrical-asymmetrical type comprising an inductive primary circuit and an inductive secondary circuit formed in the same plane by interleaved and stacked respective metal tracks, comprising at least a first crossing region in which two plates facing connectors have wider rectangular tray shapes than the metal tracks, and are each diagonally connected to secondary circuit tracks. The flat shapes facing the crossing regions provide a large crossing surface, increasing the coupling capacity between all turns of the transformer. Advantageously, particularly with regard to spurious signals, said enlarged portions are of the same size and are aligned in an axis perpendicular to said plane. According to one embodiment, the connecting plate passing over the other comprises two flanges respectively located on one end of two opposite flanks of said rectangular plate, said ends being diagonally opposite and the metal tracks of the secondary circuit being connected to each other. the lower surface of said wings. Advantageously, said wings may each have a chamfer at its connection with said rectangular plate. This configuration is particularly advantageous in terms of current flow, in case of high intensity. According to one embodiment, the primary and secondary inductive circuits each comprise a loop describing at least two turns and have a symmetrical architecture with respect to an axis of said plane. A geometrically symmetrical and balanced architecture in terms of coupling minimizes the phase and amplitude imbalances of the signals present on the primary and secondary circuits. Generally one terminal of the primary circuit is connected to a load and the other terminal to ground, therefore the coupling between the primary and secondary circuits is not carried out in the same way between the tracks on positions close to the charging terminal. and at positions close to the ground terminal. According to one embodiment, the primary and secondary inductive circuits are configured so that, over all the positions of the secondary circuit on which a coupling with the primary circuit is made, the sum of the distances of a terminal of the primary circuit to the positions The corresponding coupled values of the primary circuit are equal to the sum of the distances from the other terminal of the primary circuit to the same coupled positions. In this configuration, the secondary circuit is coupled with the primary circuit in equitable proportions on primary circuit positions close to one terminal and primary circuit positions near the other terminal. In other words, the signal on the secondary circuit "sees" both the ground terminal and the charging terminal of the primary circuit. Thus, during the course of a signal on the secondary circuit, this signal is coupled homogeneously with the entire primary circuit, providing good symmetries of phase and amplitude. This makes it possible to obtain excellent behavior in terms of phase equilibrium and amplitude balance, and in particular for power amplifier applications. In one embodiment, the at least one first crossing region comprises first metal tracks for connecting tracks of the primary circuit intersecting beneath said connecting plates. According to one embodiment, said interleaved loops comprise at least one second crossing region, in which second metal connection tracks of the primary circuit intersect on either side of a polarization terminal, one of said second tracks fitting passing over the polarization terminal and the other below. Thus the symmetry of the architecture and the equilibrium of the couplings between the primary and secondary circuits are optimized also at the level of the crossing regions. Advantageously, the polarization terminal has a rectangular plateau shape connected at a midpoint of the secondary circuit and located near the terminals of the secondary circuit. This makes it possible to connect decoupling capacitors between the polarization terminal and the ground of the differential circuit in an optimized manner in terms of space and performance. According to one embodiment, metal tracks of the primary circuit are narrower than the metal tracks of the secondary circuit, on at least a portion of the primary circuit. This allows, in addition to an advantageous reduction of the area occupied by the transformer, to limit a parasitic capacitance existing between the primary circuit and the mass of the substrate on which the transformer is manufactured. According to one embodiment, the transformer is built-in above a semiconductor substrate. It is also proposed a circuit comprising an antenna, processing means and a previously described transformer, connected between the antenna and the processing means. In addition, there is provided a telecommunication system, for example of the mobile cellular telephone type, or tablet or equivalent, comprising such a circuit. Other advantages and characteristics of the invention will appear on examining the detailed description of embodiments and implementations, in no way limiting, and the attached drawings in which: FIG. 1 represents a transformer according to the invention; in a flat view; Figures 2 and 3 show the crossover regions of the transformer in perspective views; FIG. 4 represents an input or output stage of a radiofrequency telecommunication system comprising a transformer according to the invention. Figure 1 shows a top view of an embodiment of a symmetrical-asymmetrical transformer, or balun BLN. The BALN BLN belongs to a plane P having an X axis forming an axis of symmetry of the entire architecture of this embodiment, and is made on a semiconductor substrate SC. The BALN BLN comprises a primary inductive circuit L1 formed by metal tracks whose arrangement forms an octagonal loop which winds and unfolds through three complete turns, or three turns. The primary circuit L1 comprises two terminals SE and GND intended to be connected in unbalanced mode respectively to a load, for example a transmitting or receiving antenna, and to a ground. The terminals SE and GND of the primary circuit L1 are arranged side by side symmetrically with respect to the axis X, on an outer side of the balun BLN. The BALN BLN also comprises a secondary inductive circuit L2, formed by metal tracks whose arrangement forms an octagonal loop that winds and unwinds by traversing two turns, in an interlaced manner with the turns of the loop of the primary circuit L1. The metal tracks P11-P15, P21-P25 forming the turns of the primary circuits L1 and secondary L2 are located in the same level of metallization. On the other hand, the octagonal geometries of the loops of the primary and secondary circuits are given in a nonlimiting manner, and may take another polygonal or circular shape. The secondary circuit L2 comprises two terminals PA1 and PA2 intended to be connected in symmetrical mode, for example to transistors of a power amplifier circuit. A bias terminal VCC is connected at a midpoint of the secondary circuit L2 and is intended to receive a common mode DC voltage. The terminals PA1, VCC and PA2 of the secondary circuit L2 are respectively arranged side by side symmetrically with respect to the axis X, on an outer side of the balun BLN, opposite to the side having the terminals SE, GND of the primary circuit ll. Thus, the interleaved nature of the primary inductive circuits L1 and secondary L2 provides an arrangement in which the metal tracks of the turns of the primary circuit L1 are arranged on either side and directly adjacent to the track of each turn of the secondary circuit L2. The winding and unwinding of the turns of the primary and secondary circuits introduces crossings of metal tracks. Thus, the metal tracks are stacked in particular in the crossing regions, passing above and below the metallization level of the turns, in metallization levels respectively higher and lower. Nevertheless, it is considered that the BLN balun is included in a plane P and that the symmetry with respect to the X axis does not take into account the differences in height of the metallization levels, as it is commonly accepted in microelectronics because of the very low vertical dimensions of the architecture. Thus, the BLN balun has two crossing regions CRI and CR2 in which the metal tracks intersect, via metal connection tracks. The first crossing region CRI is located in the turns on the terminal side SE, GND of the primary circuit and comprises a crossing of the primary circuit L1 and a crossing of the secondary circuit L2. The second crossing region CR2 is located in the turns on the side of the terminals of the secondary circuit L2 and comprises a crossing of the primary circuit, passing on both sides vertically from the bias terminal VCC. By traversing the primary circuit L1 of the terminal SE to the terminal GND, it goes through a track P1 which joins the second crossing region CR2. A connecting metal track PL6 directs the turn inwardly of the loop and connects the track P1 to a track P23 which joins the first crossing region CRI. In the CRI crossing region a connecting track PL4 directs the turn inwards and connects the P23 track to a P15 track. The primary circuit L1 has traveled here a first turn (a complete turn). The circuit then travels a second turn in two half-turns formed by tracks P15 and P25 interconnected at a midpoint. The loop of the primary circuit has so far rolled up and begins to unfold. The track P25 joins the first crossing region CRI, in which a connecting track PL3 directs the turn outwards and connects the track P25 to a track P13. The track P13 joins the second crossing region CR2 in which the connecting track PL5 directs the turn outwards and connects the track P13 to a track P21. The track P21 then joins the ground terminal GND. The tracks of the primary circuit L1 have thus formed a loop of three turns which winds and unfolds. By going through the secondary circuit of the terminal PA1 to the terminal PA2, one passes under the track Pli to join a track P12 which joins the first crossing region CRI. In the CRI crossing region a PLI connecting plate directs the turn inward and connects the P12 track to a P24 track. Track P24 travels half a turn to a midpoint point connected to the VCC bias terminal. The secondary circuit L2 has formed here a first turn by winding and begins to unfold. A track P14 starts from the middle point and joins the first crossing area CRI in which a connecting plate PL2 directs the turn outwards and connects the track P14 to a track P22. The track P22 joins the terminal PA2 passing under the track P21. The tracks of the secondary circuit are arranged between the tracks of the primary circuit, in particular, the track P12 is located between the tracks P11 and P13, the track P14 is located between the tracks P13 and P15, the track P22 is located between the tracks P21 and P23 and the P24 track is located between tracks P23 and P25. A constant gap separates, from edge to edge, the tracks of the primary circuit and the tracks of the secondary circuit. Such a configuration forms a structure such that on all the positions of the secondary circuit on which a coupling with the primary circuit is made, the sum of the distances of a terminal of the primary circuit to the corresponding coupled positions of the primary circuit is equal to the sum of distances from the other terminal of the primary circuit to the same coupled positions. In this configuration, the secondary circuit is coupled with the primary circuit in equitable proportions on primary circuit positions close to one terminal and primary circuit positions near the other terminal. In other words, the signal on the secondary circuit "sees" both the ground terminal GND and the load terminal SE of the primary circuit. Thus, during the course of a signal on the secondary circuit, this signal is coupled homogeneously with the entire primary circuit, providing good symmetries of phase and amplitude. This makes it possible to obtain excellent behavior in terms of phase equilibrium and amplitude balance, and in particular for power amplifier applications. On the other hand, the tracks P11, P21, P15 and P25 of the primary circuit El are thinner than the other tracks, their width being about half the width of a track of the secondary circuit L2. Thinner metal tracks in particular make it possible to reduce the parasitic capacitance existing between the metal tracks and the substrate. The current flowing in the primary circuit is usually lower than that flowing in the secondary circuit, thus an advantageous reduction in the width of the tracks on certain parts of the primary circuit is not harmful in terms of current flow. . It is also possible to make tracks P13 and P23 each in the form of two thin parallel tracks. Each thin parallel track is separated from the edge of the tracks of the secondary circuit by the same constant gap. In this embodiment, the connecting tracks of the primary circuit may have the same thickness as the tracks of the secondary circuit, advantageously in terms of spurious signals. Figure 2 shows a perspective view of the first CRI crossing region, in which interlaced and stacked metal tracks are shown in transparency for a good understanding of the architecture of this embodiment. In the first crossing region CRI, the metal track of the secondary circuit P14 is connected to the metal track P22 via a connection plate PL2. The metal track of the secondary circuit P24 is connected to the track P12 via another PLI connection plate. The PL2 connector plate is formed at the same level of metal as the metal tracks forming the turns of the primary and secondary inductive circuits and has a rectangular tray shape. The tracks P14 and P22 are connected to the coupling plate PL2 on two opposite sides of the rectangular plate, each on one end of the respective sidewall, said ends being diagonally opposite. The PLI connector plate is formed on a higher metal level at the metal tracks of the primary and secondary inductive circuits. PLI connecting plate also has a rectangular tray shape, further comprising two wings respectively on two opposite sides of the rectangular plate, each being on one end of the respective sidewall, and said ends being diagonally opposite. The tracks P12 and P24 are connected to the PLI connection plate on the lower surface of the respective wings. In addition, the PLI and PL2 connector plates are of the same size and aligned in a vertical axis perpendicular to the plane. The diagonals according to which the tracks of the secondary circuit are connected to a connecting plate or another are opposite one another. On the other hand in this non-limiting representation, the wings of the PLI connection plate each have a chamfer 1 and 2 to their connection with the rectangular PLI tray. This configuration is advantageous in terms of current flow and does not affect the balanced appearance of the couplings implemented by the invention. Indeed, although not geometrically rigorously symmetrical with respect to the X axis, this configuration is balanced in terms of coupling between the primary and secondary circuits. FIG. 3 represents a perspective view of the second crossing region CR2, in which the interleaved and stacked metal tracks are also represented in transparency for a good understanding of the proposed architecture of this embodiment. In the second crossing region CR2, the metal track of the primary circuit P11 is connected to the metal track P23 via a connecting track PL6. The connection track PL6 is at a level below the level of metallization of the tracks forming the turns of the circuit, passing under the polarization terminal VCC. The metal track P13 is connected to the track P21 via a connecting track PL5, passing above the bias terminal VCC, in a metallization level greater than the metallization level of the tracks forming the turns of the circuit. The bias terminal VCC has a rectangular tray shape and is connected along one of its widths centrally to the midpoint of the secondary circuit. The width of the rectangular plateau of the polarization terminal is about twice the width of a metal track, due to a strong current flow on the polarization terminal. Thus, the connection tracks PL5 and PL6 intersect on both sides of the bias terminal VCC, symmetrically with respect to the X axis, offering good performance in terms of phase symmetry and amplitude. The connection tracks PL5 and PL6 may have rectangular tray shapes of identical sizes to the plateau of the polarization terminal VCC, superimposed on each other and with the polarization terminal, all three aligned along a vertical axis perpendicular to the plane P. L the invention is advantageously used for any power application in radiofrequency telecommunication systems, and FIG. 4 shows an example of an input or output stage of such a SYS system, for example of the cellular or tablet mobile telephone type. , comprising a BLN balun according to the invention. The primary circuit terminal L1 of the balun BLN is connected to an antenna ANT, typically of impedance of 50 Ohms, and the terminal GND is connected to a mass "outside". The antenna can be used in transmission as in reception. The terminals PA1 and PA2 of the secondary circuit L2 are in turn connected to differential mode processing means MTD, which may comprise for example a low noise amplifier LNA. The midpoint of the secondary circuit L2 is connected to a decoupling capacitance Cap connected to ground GND_PA associated with the differential mode circuit connected to the terminals of the secondary circuit L2. The BLN balun thus provides an output signal in differential mode (or asymmetric mode) from an input signal received in asymmetric mode (or in differential mode) with very little loss, excellent phase symmetry and of amplitude, while allowing the passage of a strong intensity of current. Such performance makes it possible to optimize the efficiency of the power amplifiers combined with the BLN transformer according to the invention. In addition, the invention is not limited to the embodiments that have just been described but encompasses all variants. Thus, there has been described a balun comprising a primary circuit with three turns and a secondary circuit with two turns, but it is possible, in particular to size the impedance transformation ratio of the balun BLN, that the primary circuit comprises N + 1 turns and the secondary circuit comprises N turns, with N an integer greater than or equal to 2. The number of first crossing regions and second crossing regions comprising the characteristics described above may vary according to the number of turns of the primary circuits. and secondary.
权利要求:
Claims (14) [1" id="c-fr-0001] 1. Transformer of the symmetrical-asymmetrical type comprising a primary inductive circuit (L1) and a secondary inductive circuit (L2) formed in the same plane (P) by interleaved and stacked respective metallic tracks, comprising at least a first crossing region ( CRI) in which two connecting plates facing each other (PLI, PL2) have rectangular plate shapes wider than the metal tracks, and are each diagonally connected to tracks of the secondary circuit (L2). [2" id="c-fr-0002] 2. Transformer according to claim 1, wherein said connecting plates (PLI, PL2) are of the same size and are aligned in an axis perpendicular to said plane (P). [3" id="c-fr-0003] 3. Transformer according to any one of claims 1 or 2, wherein the connecting plate (PLI) passing over the other comprises two flanges respectively located on one end of two opposite flanks of said rectangular tray, said ends. being diagonally opposite and the metal tracks of the secondary circuit being connected to the lower surface of said wings. [4" id="c-fr-0004] 4. Transformer according to claim 3, wherein said wings each have a chamfer (1, 2) to their connection with said rectangular tray (PLI). [5" id="c-fr-0005] 5. Transformer according to any one of the preceding claims, wherein said primary inductive circuits (L1) and secondary (L2) each comprise a loop describing at least two turns and have a symmetrical architecture with respect to an axis (X) of said plane (P). [6" id="c-fr-0006] 6. Transformer according to any one of the preceding claims, wherein said primary (L1) and secondary (L2) inductive circuits are configured so that at all the positions of the secondary circuit (L2) on which a coupling with the circuit primary (L1) is realized, the sum of the distances from one terminal of the primary circuit (GND, SE) to the corresponding coupled positions of the primary circuit is equal to the sum of the distances from the other terminal of the primary circuit (SE, GND) at the same coupled positions. [7" id="c-fr-0007] 7. Transformer according to any one of the preceding claims, wherein said at least one first crossing region (CRI) comprises first metal tracks connecting (PL3, PL4) tracks of the primary circuit (El) intersecting below said connecting plates (PLI, PL2). [8" id="c-fr-0008] 8. Transformer according to any one of the preceding claims, comprising at least a second crossing region (CR2), wherein the second connecting metal tracks (PL5, PL6) of the primary circuit (El) intersect from each other. another of a bias terminal (VCC), one of said second connecting tracks (PL5) passing above the polarization terminal (VCC) and the other (PL6) below. [9" id="c-fr-0009] 9. Transformer according to claim 8, wherein the polarization terminal (VCC) has a rectangular plate form connected to a midpoint of the secondary circuit (L2) and located in the vicinity of the terminals (PA1, PA2) of the secondary circuit (L2). ). [10" id="c-fr-0010] 10. Transformer according to any one of the preceding claims, wherein the metal tracks of the primary circuit (El) are narrower than the metal tracks of the secondary circuit (L2) on at least a portion of the primary circuit (El). [11" id="c-fr-0011] 11. Transformer according to any one of the preceding claims, made in an integrated manner over a semiconductor substrate (SC). [12" id="c-fr-0012] 12. Circuit comprising an antenna (ANT), processing means (MTD) and a transformer (BEN) according to any one of the preceding claims, connected between the antenna (ANT) and the processing means (MTD). [13" id="c-fr-0013] Telecommunication system comprising a circuit according to claim 12. [14" id="c-fr-0014] The system of claim 13 forming a cellular mobile phone or tablet.
类似技术:
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同族专利:
公开号 | 公开日 CN107293394A|2017-10-24| FR3049758B1|2018-04-27| US20190180918A1|2019-06-13| CN206040388U|2017-03-22| US10249427B2|2019-04-02| CN107293394B|2020-03-13| US20170287618A1|2017-10-05|
引用文献:
公开号 | 申请日 | 公开日 | 申请人 | 专利标题 FR2819938A1|2001-01-22|2002-07-26|St Microelectronics Sa|SEMICONDUCTOR DEVICE COMPRISING WINDINGS CONSTITUTING INDUCTANCES| US20150310980A1|2014-04-23|2015-10-29|Realtek Semiconductor Corp.|Integrated stacked transformer| US4816784A|1988-01-19|1989-03-28|Northern Telecom Limited|Balanced planar transformers| US5063331A|1991-01-04|1991-11-05|North American Philips Corporation|High frequency oscillator-inverter circuit for discharge lamps| JP2009064963A|2007-09-06|2009-03-26|Nec Electronics Corp|Electronic device| CN101414508B|2007-10-16|2011-07-13|瑞昱半导体股份有限公司|Chip type balance-unbalance transformer| US8319593B2|2011-03-21|2012-11-27|Mediatek Inc.|Signal transforming circuit| FR3049758B1|2016-03-30|2018-04-27|Stmicroelectronics Sa|POWER TRANSFORMER OF SYMMETRIC-DISSYMETRIC TYPE WITH COMPLETELY BALANCED TOPOLOGY|FR3049758B1|2016-03-30|2018-04-27|Stmicroelectronics Sa|POWER TRANSFORMER OF SYMMETRIC-DISSYMETRIC TYPE WITH COMPLETELY BALANCED TOPOLOGY| TWI664649B|2017-07-31|2019-07-01|瑞昱半導體股份有限公司|Inductor device| EP3671775A1|2018-12-17|2020-06-24|Nxp B.V.|Integrated circuit comprising a balun|
法律状态:
2017-02-22| PLFP| Fee payment|Year of fee payment: 2 | 2017-10-06| PLSC| Publication of the preliminary search report|Effective date: 20171006 | 2018-02-20| PLFP| Fee payment|Year of fee payment: 3 | 2019-02-20| PLFP| Fee payment|Year of fee payment: 4 | 2020-02-20| PLFP| Fee payment|Year of fee payment: 5 | 2021-12-10| ST| Notification of lapse|Effective date: 20211105 |
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申请号 | 申请日 | 专利标题 FR1652713|2016-03-30| FR1652713A|FR3049758B1|2016-03-30|2016-03-30|POWER TRANSFORMER OF SYMMETRIC-DISSYMETRIC TYPE WITH COMPLETELY BALANCED TOPOLOGY|FR1652713A| FR3049758B1|2016-03-30|2016-03-30|POWER TRANSFORMER OF SYMMETRIC-DISSYMETRIC TYPE WITH COMPLETELY BALANCED TOPOLOGY| US15/223,148| US10249427B2|2016-03-30|2016-07-29|Power transformer of the symmetric-asymmetric type with a fully-balanced topology| CN201610728556.1A| CN107293394B|2016-03-30|2016-08-25|Symmetrical-asymmetrical power transformer with fully balanced topology| CN201620946960.1U| CN206040388U|2016-03-30|2016-08-25|Symmetry transformer of asymmetric type| US16/275,091| US20190180918A1|2016-03-30|2019-02-13|Power Transformer of the Symmetric-Asymmetric Type with a Fully-Balanced Topology| 相关专利
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